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Optoisolators (Photocouplers)
CNC7H001
Optoisolator
Unit: mm
I Features
* Housed in a surface mount package alternative to mini-flat package of 1.27 mm pitch * Double molded package * 2.5 kV isolation voltage * UL approved (File No. E79920)
10.30.3 16 9
I Applications
* Suited for interface circuits requiring high density mounting of parts, especially hybrid ICs and programmable controllers * Signal transfer between circuits with different potentials and with impedances
1 1.27 0.4
8
4.4 7.00.3
2.0
0.10.1
0.15+0.10 -0.05
(1.3)
0.50.3
I Absolute Maximum Ratings Ta = 25C
Parameter Input (light Forward current (DC) Power dissipation *2 Output (photo Collector current transistor) Collector-emitter voltage Emitter-collector voltage Collector power dissipation *3 Isolation voltage, input to output *4 Operating ambient temperature Storage temperature emitting diode) Pulse forward current *1 Symbol IF IFP PD IC VCEO VECO PC VISO Topr Tstg Rating 50 1 75 50 80 7 120 2 500 -30 to +100 -55 to +125 Unit mA A mW/ch mA V V mW/ch V[rms] C C
1 2 3
1, 3, 5, 7 : Anode/Cathode 2, 4, 6, 8 : Cathode/Anode 9, 11, 13, 15 : Emitter 10, 12, 14, 16: Collector PCTFG116-001 Package
Pin Connection
16 15 14 13 12 11 10 9
4
5
6
7
8
Top View
Note) *1: Pulse repetition rate = 100 pps. Pulse wide 100 s *2: Above 25C ambient temperature, derate dissipation at the rate of 0.75 mW/C. *3: Above 25C ambient temperature, derate dissipation at the rate of 1.2 mW/C. *4: AC voltage (t = 1.0 min., RH < 60%)
Publication date: May 2002
SHF00007AED
1
CNC7H001
I Electrical Characteristics Ta = 25C 3C
Parameter Input diode Output Forward voltage Capacitance Collector-emitter dark current Symbol VF Ct ICEO VCEO VECO CC CTR CISO RISO tr tf VCE(sat) IC(Ratio) IF = 50 mA VR = 0 V, f = 1 MHz VCE = 20 V IC = 100 A IE = 10 A VCE = 10 V, f = 1 MHz VCE = 5 V, IF = 5 mA f = 1 MHz VISO = 500 V VCC = 10 V, IC = 2 mA RL = 100 IF = 20 mA, IC = 1 mA VCE = 5 V, IF = 5 mA 0.33 1011 4 3 0.1 1 0.2 3.0 V 100 0.6 80 7 10 600 Conditions Min Typ 1.35 15 5 100 Max 1.5 Unit V pF nA V V pF % pF s
transistor Collector-emitter voltage Emitter-collector voltage Collector capacitance Coupled Current transfer ratio *1 Capacitance Resistance Rise time
*2
Fall time *3 Saturation voltage Collector current ratio *4
Note) *1: CTR = IC / IF x 100% *2: Rise time is defined as the time required for the collector current to rise from 10% to 90% of peak value. *3: Fall time is defined as the time required for the collector current to decrease from 90% to 10% of peak value. IC2 (IF = IF2 , VCE = 5 V) *4: IC(Ratio) = IC1 (IF = IF1 , VCE = 5 V) Input and output are practiced by electricity. The device is designed be disregarded radiation.
PC , PD Ta
Collector power dissipation , power dissipation PC , PD (mW)
160 PC
IF V F
60 Ta = 25C 102 VCC = 5 V Ta = 25C
IC I F
50
Collector current IC (mA)
120
Forward current IF (mA)
10
40
80 PD
30
1
20
40
10-1
10
0 -20
0
0 20 40 60 80 100 120
0
0.4
0.8
1.2
1.6
2.0
2.4
10-2 10-1
1
10
102
Ambient temperature Ta (C)
Forward voltage VF (V)
Forward current IF (mA)
2
SHF00007AED
CNC7H001
IC VCE
50 IF = 30 mA 25 mA
180
IC Ta
104
ICEO Ta
VCE = 20 V
Collector-emitter dark current ICEO (nA)
Relative collector current IC (%)
40
20 mA
103
Collector current IC (mA)
140
15 mA 30 10 mA 20
102
100
10
1
60
10
5 mA 2 mA 1 mA 0 2 4 6 8 10 12
10-1
0
20 -20
0
20
40
60
80
100
10-2 -40 -20
0
20
40
60
80
100
Collector-emitter voltage VCE (V)
Ambient temperature Ta (C)
Ambient temperature Ta (C)
tr I C
102 VCC = 10 V Ta = 25C RL = 1 k 500 100 1
tf IC
102 VCC = 10 V Ta = 25C RL = 1 k 500 100 1
102
Frequency characteristics
Ta = 25C
Relative power output P (dB)
10
10
10
Rise time tr (s)
Fall time tf (s)
1
10-1
Sig. in VCC V1 V1 50 V2 RL 1 V2 90% 10%
10-1
Sig. in VCC V1 V1 50 V2 RL 1 V2 90% 10%
10-1
tr
10
td
tf
102
10-2 10-1
tr
10
td
tf
102
10-2 10-1
10-2 1 10
IF = 5 mA
102
2 mA
103
Collector current IC (mA)
Collector current IC (mA)
Frequency f (kHz)
SHF00007AED
3
Caution for Safety
I Gallium arsenide material (GaAs) is used in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY

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